Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

H. C. Chen; C. M. Huang; K. F. Liao; S. W. Lee; C. H. Hsu; L. J. Chen

doi:10.1016/j.nimb.2005.05.019

Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

H. C. Chen, C. M. Huang, K. F. Liao, S. W. Lee, C. H. Hsu, L. J. Chen

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar⁺ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.

Original language	English
Pages (from-to)	465-469
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	237
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.05.019
State	Published - Aug 2005
Event	Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - Duration: 25 Oct 2004 → 27 Oct 2004

Keywords

Ion sputtering
Quantum dots
Silicon

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10.1016/j.nimb.2005.05.019

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title = "Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering",

abstract = "The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.",

keywords = "Ion sputtering, Quantum dots, Silicon",

author = "Chen, {H. C.} and Huang, {C. M.} and Liao, {K. F.} and Lee, {S. W.} and Hsu, {C. H.} and Chen, {L. J.}",

year = "2005",

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note = "Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 ; Conference date: 25-10-2004 Through 27-10-2004",

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TY - JOUR

T1 - Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

AU - Chen, H. C.

AU - Huang, C. M.

AU - Liao, K. F.

AU - Lee, S. W.

AU - Hsu, C. H.

AU - Chen, L. J.

PY - 2005/8

Y1 - 2005/8

N2 - The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.

AB - The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300 eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650 eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.

KW - Ion sputtering

KW - Quantum dots

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=23444452924&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.05.019

DO - 10.1016/j.nimb.2005.05.019

M3 - 會議論文

AN - SCOPUS:23444452924

SN - 0168-583X

VL - 237

SP - 465

EP - 469

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

T2 - Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004

Y2 - 25 October 2004 through 27 October 2004

ER -

Morphology modifications of quantum dots on Si(0 0 1) surface by ion sputtering

Abstract

Keywords

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