Morphology and field-effect transistor characteristics of semicrystalline poly(3-hexylthiophene) and poly(stearyl acrylate) blend nanowires

Jung Chuan Lin, Wen Ya Lee, Hung Chin Wu, Chih Chieh Chou, Yu Cheng Chiu, Ya Sen Sun, Wen Chang Chen

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The morphology and charge transport characteristics of semicrystalline poly(3-hexylthiophene) (P3HT) and semicrystalline poly(stearyl acrylate) (PSA) or amorphous poly(methyl methacrylate) (PMMA) with various blending ratios were systematically investigated using different solvents. The P3HT-PSA films prepared from CH 2Cl 2 formed well-defined P3HT nanowires with an average diameter of 30 nm, which was larger than that (∼14 nm) of the P3HT-PMMA films, as evidenced by TEM and AFM. The P3HT-PSA nanowire based field effect transistors (FET) could achieve a high hole mobility of 3.2 × 10 -3 cm 2 V -1 s -1 using only 2 wt% P3HT composition. The maximum FET mobility of 7.86 × 10 -3 cm 2 V -1 s -1 with the on/off ratio of 10 5 was obtained in the 10 wt% P3HT-PSA blends, which were higher than those of pristine P3HT and P3HT-PMMA devices. The semicrystalline PSA probably facilitated large P3HT crystallites and led to high FET mobility. Also, the P3HT-PSA FET devices showed lower percolation threshold and better ambient stability than the P3HT-PMMA devices. These results indicated that the crystalline non-conjugated polymers played a critical role in the charge transport and air stability of FETs based on conjugated polymer blends.

Original languageEnglish
Pages (from-to)14682-14690
Number of pages9
JournalJournal of Materials Chemistry
Volume22
Issue number29
DOIs
StatePublished - 7 Aug 2012

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