Monolithic 2-μm/0.5-μm GaAs HBT-HEMT (BiHEMT) process for low phase noise voltage controlled oscillators (VCOs)

Cheng Han Lu, Chi Hsien Lin, Yen Han Liao, Hong Yeh Chang, Yu Chi Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This paper describes a 2.4-GHz single-ended and a 6-GHz differential voltage-controlled oscillators (VCOs) using a monolithic stacked 2-μm InGaP/GaAs heterojunction bipolar transistor (HBT) and 0.5-μm AlGaAs/GaAs pseudomorphic high-electron mobility transistor (PHEMT) (BiHEMT) process. The BiHEMT process features high integration, low noise, and high frequency performance, and also it provides great design flexibility to achieve good circuit performance. To demonstrate the property of this BiHEMT technology, two VCOs based on common-base/emitter configurations are presented. The 2.4-GHz VCO has a tuning range of 430 MHz with a bandwidth of 17.9% and a phase noise of -122 dBc/Hz at 1-MHz offset. The 6-GHz VCO has a tuning range of 470 MHz and a phase noise of -107.7 dBc/Hz at 1-MHz offset. The chip sizes of the two VCOs are both 1×1 mm2.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages1235-1237
Number of pages3
DOIs
StatePublished - 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
Country/TerritoryTaiwan
CityKaohsiung
Period4/12/127/12/12

Keywords

  • GaAs
  • heterojunction bipolar transistor (HBT)
  • pseudomorphic high-electron mobility transistor (PHEMT)
  • voltage-controlled oscillator (VCO)

Fingerprint

Dive into the research topics of 'Monolithic 2-μm/0.5-μm GaAs HBT-HEMT (BiHEMT) process for low phase noise voltage controlled oscillators (VCOs)'. Together they form a unique fingerprint.

Cite this