Molecular beam epitaxial growth and characterization of InSb on Si

J. I. Chyi, D. Biswas, S. V. Iyer, N. S. Kumar, H. Morkoç, R. Bean, K. Zanio, H. Y. Lee, Haydn Chen

Research output: Contribution to journalArticlepeer-review

79 Scopus citations


Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm 2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 16 and 2.7×1016 cm-3. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm2/V s with carrier concentrations of about 2.0×10 16 cm-3. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.

Original languageEnglish
Pages (from-to)1016-1018
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 1989


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