Abstract
Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm 2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 16 and 2.7×1016 cm-3. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm2/V s with carrier concentrations of about 2.0×10 16 cm-3. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.
Original language | English |
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Pages (from-to) | 1016-1018 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 54 |
Issue number | 11 |
DOIs | |
State | Published - 1989 |