Modeling extreme-ultraviolet emission from laser-produced plasma using particle-in-cell method

Po Yen Lai, Shih Hung Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A one-dimensional (1D) collisional relativistic particle-in-cell (PIC) code with ionization processes has been developed to investigate the key semiconductor manufacturing device, i.e., the extreme ultraviolet (EUV) light source from laserproduced plasmas (LPP). Unlike hydrodynamic approach, the kinetic model describes laser heating, energy transport and ultrafast electron dynamics with least approximations. The two major numerical effects of PIC simulations, i.e., numerical self-heating and numerical thermalization, are also studied and mitigated in the collisional PIC model. The integrated numerical model is achieved by simulating the dense plasma using collisional PIC model and estimating EUV emission and mean opacities according to the respective weighted oscillator strengths of tin ions with charged states varying from 5+ to 13+.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXIII
EditorsBernd Witzigmann, Yasuhiko Arakawa, Fritz Henneberger, Marek Osinski
PublisherSPIE
ISBN (Electronic)9781628414479
DOIs
StatePublished - 2015
Event23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices - San Francisco, United States
Duration: 9 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9357
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices
Country/TerritoryUnited States
CitySan Francisco
Period9/02/1512/02/15

Keywords

  • Extreme ultraviolet source
  • ionization
  • laser-produced plasma
  • particle-in-cell simulation
  • weighted oscillator strengths

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