Model for melting enthalpy of Sn in Ge-Sn composites

D. Turnbull, J. S.C. Jang, C. C. Koch

Research output: Contribution to journalArticlepeer-review

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Abstract

The finding of Jang and Koch that the melting enthalpy/mass, △Hm, of a Sn matrix containing a fine dispersion of Ge particles sharply decreases with increasing Ge volume fraction, vGe, > 0.5 and vanishes at νGe = ν°Ge ≈ 0.81, is accounted for by supposing that the Sn is distributed between an interfacial and bulk state. The interfacial state is one in which the Sn is assumed to be in a disordered, possibly amorphous, structure coating the Ge particles uniformly to a constant thickness, δ. The remaining “bulk” Sn is assumed to exhibit the normal enthalpy of fusion, △H°m. The model accounts for the dependence of △Hm on νGe within the experimental uncertainty. With the average width of Ge particles ∼10 nm, δ is estimated to be ∼0.23 nm; i.e., of the order of the thickness of one Sn monolayer.

Original languageEnglish
Pages (from-to)1731-1732
Number of pages2
JournalJournal of Materials Research
Volume5
Issue number8
DOIs
StatePublished - Aug 1990

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