Microstructure studies of InGaN/GaN multiple quantum wells

Yen Sheng Lin, Chen Hsu, Kung Jeng Ma, Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, Chih Wei Liu, C. C. Yang, Jen Inn Chyi

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations


The effects of nominal indium content on compositional fluctuation and structure defects in InGaN/GaN multiple quantum well (QW) structures were reported. The samples were grown in a metallorganic chemical vapor deposition (MOCVD) reactor and consisted of five or ten periods of Si-doped InGaN wells with 3-nm thickness. Material microanalyses of the quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.

Original languageEnglish
StatePublished - 2001
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: 15 Jul 200119 Jul 2001


Conference4th Pacific Rim Conference on Lasers and Electro-Optics


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