Microstructure studies of InGaN/GaN multiple quantum wells

Yen Sheng Lin; Chen Hsu; Kung Jeng Ma; Shih Wei Feng; Yung Chen Cheng; Yi Yin Chung; Chih Wei Liu; C. C. Yang; Jen Inn Chyi

Microstructure studies of InGaN/GaN multiple quantum wells

Yen Sheng Lin, Chen Hsu, Kung Jeng Ma, Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, Chih Wei Liu, C. C. Yang, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The effects of nominal indium content on compositional fluctuation and structure defects in InGaN/GaN multiple quantum well (QW) structures were reported. The samples were grown in a metallorganic chemical vapor deposition (MOCVD) reactor and consisted of five or ten periods of Si-doped InGaN wells with 3-nm thickness. Material microanalyses of the quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.

Original language	English
Pages	II218-II219
State	Published - 2001
Event	4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: 15 Jul 2001 → 19 Jul 2001

Conference

Conference	4th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	Japan
City	Chiba
Period	15/07/01 → 19/07/01

Cite this

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title = "Microstructure studies of InGaN/GaN multiple quantum wells",

abstract = "The effects of nominal indium content on compositional fluctuation and structure defects in InGaN/GaN multiple quantum well (QW) structures were reported. The samples were grown in a metallorganic chemical vapor deposition (MOCVD) reactor and consisted of five or ten periods of Si-doped InGaN wells with 3-nm thickness. Material microanalyses of the quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.",

author = "Lin, {Yen Sheng} and Chen Hsu and Ma, {Kung Jeng} and Feng, {Shih Wei} and Cheng, {Yung Chen} and Chung, {Yi Yin} and Liu, {Chih Wei} and Yang, {C. C.} and Chyi, {Jen Inn}",

year = "2001",

language = "???core.languages.en_GB???",

pages = "II218--II219",

note = "4th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 15-07-2001 Through 19-07-2001",

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TY - CONF

T1 - Microstructure studies of InGaN/GaN multiple quantum wells

AU - Lin, Yen Sheng

AU - Hsu, Chen

AU - Ma, Kung Jeng

AU - Feng, Shih Wei

AU - Cheng, Yung Chen

AU - Chung, Yi Yin

AU - Liu, Chih Wei

AU - Yang, C. C.

AU - Chyi, Jen Inn

PY - 2001

Y1 - 2001

N2 - The effects of nominal indium content on compositional fluctuation and structure defects in InGaN/GaN multiple quantum well (QW) structures were reported. The samples were grown in a metallorganic chemical vapor deposition (MOCVD) reactor and consisted of five or ten periods of Si-doped InGaN wells with 3-nm thickness. Material microanalyses of the quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.

AB - The effects of nominal indium content on compositional fluctuation and structure defects in InGaN/GaN multiple quantum well (QW) structures were reported. The samples were grown in a metallorganic chemical vapor deposition (MOCVD) reactor and consisted of five or ten periods of Si-doped InGaN wells with 3-nm thickness. Material microanalyses of the quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.

UR - http://www.scopus.com/inward/record.url?scp=0035688094&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0035688094

SP - II218-II219

T2 - 4th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 15 July 2001 through 19 July 2001

ER -

Microstructure studies of InGaN/GaN multiple quantum wells

Abstract

Conference

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