The effects of nominal indium content on compositional fluctuation and structure defects in InGaN/GaN multiple quantum well (QW) structures were reported. The samples were grown in a metallorganic chemical vapor deposition (MOCVD) reactor and consisted of five or ten periods of Si-doped InGaN wells with 3-nm thickness. Material microanalyses of the quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.
|State||Published - 2001|
|Event||4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan|
Duration: 15 Jul 2001 → 19 Jul 2001
|Conference||4th Pacific Rim Conference on Lasers and Electro-Optics|
|Period||15/07/01 → 19/07/01|