Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs-GaAs multiple-quantum-well structures

H. J. Ou, J. M. Cowley, J. I. Chyi, A. Salvador, H. Morkoç

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Abstract

By using a nanoprobe electron beam 4 Å in diameter, the [001] nanodiffraction patterns of AlGaAs-GaAs multiple-quantum-well structures have been formed and the epitaxial relationship between AlGaAs and GaAs is confirmed. The intensities of the (200) diffraction disk, monitored by a spot detector, are displayed in two ways: (1) the (200) dark-field scanning transmission electron microscopy (STEM), which shows the layers of AlGaAs and GaAs in contrast, and (2) the (200) line-scan profile, which reveals the (200) intensity distribution of a specimen region of uniform thickness. The thickness and the absolute Al concentration of AlGaAs layers are, respectively, determined from the contrast of, and the (200) thickness contour position in, the (200) dark-field STEM images. The microanalysis on the (200) line-scan profile is used to find the local Al concentrations in AlGaAs layers and to study the interface boundary between the layers of AlGaAs and GaAs. Diffusion of the Al atoms from the AlGaAs layer into the GaAs layer is also reported.

Original languageEnglish
Pages (from-to)698-704
Number of pages7
JournalJournal of Applied Physics
Volume67
Issue number2
DOIs
StatePublished - 1990

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