Mextram modeling of Si/SiGe heterojunction phototransistors

F. Yuan; Z. Pei; J. W. Shi; S. T. Chang; C. W. Liu

doi:10.1109/ISDRS.2003.1272011

Mextram modeling of Si/SiGe heterojunction phototransistors

F. Yuan, Z. Pei, J. W. Shi, S. T. Chang, C. W. Liu

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

To integrate the phototransistor into the receiver circuit for optical communication, not only the compatible process is pre-requisite [1], but also the device model is required for circuit simulation. The designed nkT base current (depletion region recombination current at B-E junction) can increase the bandwidth of the phototransistor and provide a possible bias margin for avalanche gain. Therefore, a modified Mextram model is proposed for the HPT simulation.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	92-93
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1272011
State	Published - 2003
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: 10 Dec 2003 → 12 Dec 2003

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	10/12/03 → 12/12/03

Access to Document

10.1109/ISDRS.2003.1272011

Cite this

Yuan, F., Pei, Z., Shi, J. W., Chang, S. T., & Liu, C. W. (2003). Mextram modeling of Si/SiGe heterojunction phototransistors. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 92-93). Article 1272011 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272011

@inproceedings{79a4671122a5424a96c6e40e5a09b2a6,

title = "Mextram modeling of Si/SiGe heterojunction phototransistors",

abstract = "To integrate the phototransistor into the receiver circuit for optical communication, not only the compatible process is pre-requisite [1], but also the device model is required for circuit simulation. The designed nkT base current (depletion region recombination current at B-E junction) can increase the bandwidth of the phototransistor and provide a possible bias margin for avalanche gain. Therefore, a modified Mextram model is proposed for the HPT simulation.",

author = "F. Yuan and Z. Pei and Shi, {J. W.} and Chang, {S. T.} and Liu, {C. W.}",

year = "2003",

doi = "10.1109/ISDRS.2003.1272011",

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series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "92--93",

booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

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Yuan, F, Pei, Z, Shi, JW, Chang, ST & Liu, CW 2003, Mextram modeling of Si/SiGe heterojunction phototransistors. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272011, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 92-93, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 10/12/03. https://doi.org/10.1109/ISDRS.2003.1272011

Mextram modeling of Si/SiGe heterojunction phototransistors. / Yuan, F.; Pei, Z.; Shi, J. W. et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 92-93 1272011 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mextram modeling of Si/SiGe heterojunction phototransistors

AU - Yuan, F.

AU - Pei, Z.

AU - Shi, J. W.

AU - Chang, S. T.

AU - Liu, C. W.

PY - 2003

Y1 - 2003

N2 - To integrate the phototransistor into the receiver circuit for optical communication, not only the compatible process is pre-requisite [1], but also the device model is required for circuit simulation. The designed nkT base current (depletion region recombination current at B-E junction) can increase the bandwidth of the phototransistor and provide a possible bias margin for avalanche gain. Therefore, a modified Mextram model is proposed for the HPT simulation.

AB - To integrate the phototransistor into the receiver circuit for optical communication, not only the compatible process is pre-requisite [1], but also the device model is required for circuit simulation. The designed nkT base current (depletion region recombination current at B-E junction) can increase the bandwidth of the phototransistor and provide a possible bias margin for avalanche gain. Therefore, a modified Mextram model is proposed for the HPT simulation.

UR - http://www.scopus.com/inward/record.url?scp=84945259053&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2003.1272011

DO - 10.1109/ISDRS.2003.1272011

M3 - 會議論文篇章

AN - SCOPUS:84945259053

T3 - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

SP - 92

EP - 93

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

Yuan F, Pei Z, Shi JW, Chang ST, Liu CW. Mextram modeling of Si/SiGe heterojunction phototransistors. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 92-93. 1272011. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1272011

Mextram modeling of Si/SiGe heterojunction phototransistors

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