Method to evaluate afterpulsing probability in single-photon avalanche diodes

Bo Wei Tzou, Jau Yang Wu, Yi Shan Lee, Sheng Di Lin

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature- dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.

Original languageEnglish
Pages (from-to)3774-3777
Number of pages4
JournalOptics Letters
Issue number16
StatePublished - 2015


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