Metal-semiconductor-metal traveling-wave photodetectors

Jin Wei Shi; Kian Giap Gan; Yi Jen Chiu; Yen Hung Chen; Chi Kuang Sun; Ying Jay Yang; John E. Bowers

doi:10.1109/68.924045

Metal-semiconductor-metal traveling-wave photodetectors

Jin Wei Shi, Kian Giap Gan, Yi Jen Chiu, Yen Hung Chen, Chi Kuang Sun, Ying Jay Yang, John E. Bowers

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

We demonstrate a novel type of traveling wave photodetector: "metal-semiconductor-metal traveling-wave photodetector" (MSM-TWPD). Demonstrated devices were fabricated using low-temperature grown GaAs (LTG-GaAs). In order to achieve high internal quantum efficiency, the narrow spacing between electrodes was fabricated by the self-aligned process without e-beam lithography. Electrooptical sampling measurement results at different optical pumping level are reported. Ultrahigh bandwidth (0.8-ps, 570-GHz transform bandwidth) performance was observed even under high optical power illumination (∼1.8 mW) with 8.1% net quantum efficiency. Compared with LTG-GaAs-based p-i-n TWPD and vertically illuminated MSM photodetector (PD), this novel TWPD has higher output saturation current with near terahertz electrical bandwidth, better quantum efficiency, and can be easily fabricated and integrated with other microwave devices. It thus promises the application in high-power distributed PD array or terahertz signal generation.

Original language	English
Pages (from-to)	623-625
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/68.924045
State	Published - Jun 2001

Keywords

Low-temperature-grown GaAs
Metal-semiconductor-metal photodetectors
Self-alignment
Traveling-wave photodetectors
Ultrahigh-speed photodetectors

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title = "Metal-semiconductor-metal traveling-wave photodetectors",

abstract = "We demonstrate a novel type of traveling wave photodetector: {"}metal-semiconductor-metal traveling-wave photodetector{"} (MSM-TWPD). Demonstrated devices were fabricated using low-temperature grown GaAs (LTG-GaAs). In order to achieve high internal quantum efficiency, the narrow spacing between electrodes was fabricated by the self-aligned process without e-beam lithography. Electrooptical sampling measurement results at different optical pumping level are reported. Ultrahigh bandwidth (0.8-ps, 570-GHz transform bandwidth) performance was observed even under high optical power illumination (∼1.8 mW) with 8.1% net quantum efficiency. Compared with LTG-GaAs-based p-i-n TWPD and vertically illuminated MSM photodetector (PD), this novel TWPD has higher output saturation current with near terahertz electrical bandwidth, better quantum efficiency, and can be easily fabricated and integrated with other microwave devices. It thus promises the application in high-power distributed PD array or terahertz signal generation.",

keywords = "Low-temperature-grown GaAs, Metal-semiconductor-metal photodetectors, Self-alignment, Traveling-wave photodetectors, Ultrahigh-speed photodetectors",

author = "Shi, {Jin Wei} and Gan, {Kian Giap} and Chiu, {Yi Jen} and Chen, {Yen Hung} and Sun, {Chi Kuang} and Yang, {Ying Jay} and Bowers, {John E.}",

note = "Funding Information: Manuscript received December 28, 2000; revised February 21, 2001. This work was supported by National Science Council of Taiwan, R.O.C., under Grant NSC 89-2215-E-002-064 and by the National Science Foundation under Award INT-9813411.",

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AU - Shi, Jin Wei

AU - Gan, Kian Giap

AU - Chiu, Yi Jen

AU - Chen, Yen Hung

AU - Sun, Chi Kuang

AU - Yang, Ying Jay

AU - Bowers, John E.

N1 - Funding Information: Manuscript received December 28, 2000; revised February 21, 2001. This work was supported by National Science Council of Taiwan, R.O.C., under Grant NSC 89-2215-E-002-064 and by the National Science Foundation under Award INT-9813411.

PY - 2001/6

Y1 - 2001/6

N2 - We demonstrate a novel type of traveling wave photodetector: "metal-semiconductor-metal traveling-wave photodetector" (MSM-TWPD). Demonstrated devices were fabricated using low-temperature grown GaAs (LTG-GaAs). In order to achieve high internal quantum efficiency, the narrow spacing between electrodes was fabricated by the self-aligned process without e-beam lithography. Electrooptical sampling measurement results at different optical pumping level are reported. Ultrahigh bandwidth (0.8-ps, 570-GHz transform bandwidth) performance was observed even under high optical power illumination (∼1.8 mW) with 8.1% net quantum efficiency. Compared with LTG-GaAs-based p-i-n TWPD and vertically illuminated MSM photodetector (PD), this novel TWPD has higher output saturation current with near terahertz electrical bandwidth, better quantum efficiency, and can be easily fabricated and integrated with other microwave devices. It thus promises the application in high-power distributed PD array or terahertz signal generation.

AB - We demonstrate a novel type of traveling wave photodetector: "metal-semiconductor-metal traveling-wave photodetector" (MSM-TWPD). Demonstrated devices were fabricated using low-temperature grown GaAs (LTG-GaAs). In order to achieve high internal quantum efficiency, the narrow spacing between electrodes was fabricated by the self-aligned process without e-beam lithography. Electrooptical sampling measurement results at different optical pumping level are reported. Ultrahigh bandwidth (0.8-ps, 570-GHz transform bandwidth) performance was observed even under high optical power illumination (∼1.8 mW) with 8.1% net quantum efficiency. Compared with LTG-GaAs-based p-i-n TWPD and vertically illuminated MSM photodetector (PD), this novel TWPD has higher output saturation current with near terahertz electrical bandwidth, better quantum efficiency, and can be easily fabricated and integrated with other microwave devices. It thus promises the application in high-power distributed PD array or terahertz signal generation.

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KW - Self-alignment

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KW - Ultrahigh-speed photodetectors

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Metal-semiconductor-metal traveling-wave photodetectors

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