Metal-induced crystallization of amorphous Si1-xGex by rapid thermal annealing

C. H. Yu, P. H. Yeh, S. L. Cheng, L. J. Chen, L. W. Cheng

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9 Scopus citations


Metal-induced crystallization (MIC) of amorphous Si1-xGe x (x=0.2 and 0.3) thin films on SiO2 by rapid thermal annealing (RTA) at 300-600°C has been investigated. At low annealing temperature, Ni reacted with a-Si1-xGex films to form Ni germanosilicides. The crystallization temperature of a-Si0.7Ge 0.3 and a-Si0.8Ge0.2 was lowered from 500 to 400°C and 600 to 500°C, respectively, with capping Ni. The Ni germanosilicide grains were observed to form in the annealed Ni/a-Si 0.7Ge0.3 and Ni/a-Si0.8Ge0.3 samples after annealing at 500°C. The formation of island structure containing a small amount of Ge at the bottom of polycrystalline Si1-xGe x films is attributed to the preferential reactions of Ni with Si to Ge.

Original languageEnglish
Pages (from-to)356-360
Number of pages5
JournalThin Solid Films
Issue numberSPEC. ISS.
StatePublished - 22 Dec 2004


  • Metal-induced crystallization
  • Ni germanosilicides
  • Poly-SiGe
  • a-SiGe


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