Mechanisms for the improved stability of C54-TiSi2 on (001)Si by the addition of N2 to Ar during Ti sputtering

S. M. Chang, S. L. Cheng, L. J. Chen, C. H. Luo

Research output: Contribution to journalArticlepeer-review

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Abstract

Addition of N2 to Ar during Ti sputtering has been found to improve the thermal stability of TiSi2. For samples sputtered with a mixture of Ar and N2, TiSi2 was found to be stable after 1050 °C, 30 s annealing. Furthermore, the phase transformation temperature from the C49 to C54 phase was not affected with the addition of a small amount of nitrogen. The stuffing of grain boundaries of TiSi2 and TiN/TiSi2 interfaces by nitrogen atoms is thought to retard the transport of Si and Ti atoms. In addition, titanium nitride particles embedded in TiSi2 near the TiN/TiSi2 interface may also protect the TiSi2 films from plastic deformation and retard the grain growth during high temperature annealing. Smaller average grain size of C54-TiSi2 in samples prepared with the addition of N2 to Ar during Ti sputtering than that in pure Ti samples is also beneficial in enhancing the thermal stability.

Original languageEnglish
Pages (from-to)1779-1783
Number of pages5
JournalJournal of Applied Physics
Volume90
Issue number4
DOIs
StatePublished - 15 Aug 2001

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