Mechanism underlying damage induced in gallium nitride epilayer during laser lift-off process

Ko Tao Lee, Yeeu Chang Lee, Sheng Han Tu, Ching Liang Lin, Po Hen Chen, Cheng Yi Liu, Jeng Yang Chang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A vertical-type gallium nitride blue light-emitting diode on silicon was prepared by using a laser lift-off process. A grid like surface was obtained after the laser lift-off process. The central part of the grid preserves a uniform surface morphology, but damage occurred and a crack was formed on the peripheral area of a grid. Though a comparison of the crystalline and optical properties of the central and peripheral areas, the high thermal gradient of the peripheral area under pulse laser shot irradiation was found to play an important role during the laser lift-off process.

Original languageEnglish
Pages (from-to)930-932
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number2 PART 1
DOIs
StatePublished - 15 Feb 2008

Keywords

  • Damage
  • LED
  • LLO
  • Thermal gradient

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