MAGNETRON-ENHANCED PLASMA ETCHING OF SILICON & SILICON DIOXIDE.

David C. Hinson, I. Lin, Walter H. Class, Steven Hurwitt

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A new plasma regime and technique for high rate, low energy anisotropic etching of Si and SiO//2 has been developed. This regime allows the best features of older RIE and high pressure planar plasma etchers to be incorporated in a single system.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalSemiconductor International
Volume6
Issue number10
StatePublished - 1983

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