Magnetic Field Resonance and Pressure Effects on Epitaxial Thin Film Deposition and In Situ Plasma Diagnostics

C. R. Yang; C. H. Yeh; L. C. Hu; T. C. Wei; C. C. Lee; J. Y. Chang; T. T. Li

doi:10.1007/s11090-017-9853-3

Magnetic Field Resonance and Pressure Effects on Epitaxial Thin Film Deposition and In Situ Plasma Diagnostics

C. R. Yang, C. H. Yeh, L. C. Hu, T. C. Wei, C. C. Lee, J. Y. Chang, T. T. Li

Research output: Contribution to journal › Article › peer-review

Abstract

This study demonstrated the use of quadrupole mass spectrometry and optical emission spectrometry in diagnosing the plasma in the electron cyclotron resonance chemical vapor deposition (ECRCVD) process. The effects of adjusting the main magnetic coil current and process pressure on chemical composition of the plasma and the characteristics of the epitaxial thin film in the ECRCVD system were investigated. When the main magnetic coil current increased, the deposition rate of thin film increased, with no major effect on thin film crystallization. However, when the process pressure was higher, both the deposition rate and crystallization of epitaxial thin film increased.

Original language	English
Pages (from-to)	247-259
Number of pages	13
Journal	Plasma Chemistry and Plasma Processing
Volume	38
Issue number	1
DOIs	https://doi.org/10.1007/s11090-017-9853-3
State	Published - 1 Jan 2018

Keywords

ECRCVD
OES
PECVD
QMS
Thin film

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abstract = "This study demonstrated the use of quadrupole mass spectrometry and optical emission spectrometry in diagnosing the plasma in the electron cyclotron resonance chemical vapor deposition (ECRCVD) process. The effects of adjusting the main magnetic coil current and process pressure on chemical composition of the plasma and the characteristics of the epitaxial thin film in the ECRCVD system were investigated. When the main magnetic coil current increased, the deposition rate of thin film increased, with no major effect on thin film crystallization. However, when the process pressure was higher, both the deposition rate and crystallization of epitaxial thin film increased.",

keywords = "ECRCVD, OES, PECVD, QMS, Thin film",

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AU - Yang, C. R.

AU - Yeh, C. H.

AU - Hu, L. C.

AU - Wei, T. C.

AU - Lee, C. C.

AU - Chang, J. Y.

AU - Li, T. T.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - This study demonstrated the use of quadrupole mass spectrometry and optical emission spectrometry in diagnosing the plasma in the electron cyclotron resonance chemical vapor deposition (ECRCVD) process. The effects of adjusting the main magnetic coil current and process pressure on chemical composition of the plasma and the characteristics of the epitaxial thin film in the ECRCVD system were investigated. When the main magnetic coil current increased, the deposition rate of thin film increased, with no major effect on thin film crystallization. However, when the process pressure was higher, both the deposition rate and crystallization of epitaxial thin film increased.

AB - This study demonstrated the use of quadrupole mass spectrometry and optical emission spectrometry in diagnosing the plasma in the electron cyclotron resonance chemical vapor deposition (ECRCVD) process. The effects of adjusting the main magnetic coil current and process pressure on chemical composition of the plasma and the characteristics of the epitaxial thin film in the ECRCVD system were investigated. When the main magnetic coil current increased, the deposition rate of thin film increased, with no major effect on thin film crystallization. However, when the process pressure was higher, both the deposition rate and crystallization of epitaxial thin film increased.

KW - ECRCVD

KW - OES

KW - PECVD

KW - QMS

KW - Thin film

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M3 - 期刊論文

AN - SCOPUS:85031907529

SN - 0272-4324

VL - 38

SP - 247

EP - 259

JO - Plasma Chemistry and Plasma Processing

JF - Plasma Chemistry and Plasma Processing

IS - 1

ER -

Magnetic Field Resonance and Pressure Effects on Epitaxial Thin Film Deposition and In Situ Plasma Diagnostics

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Keywords

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