Abstract
Measurements were conducted to investigate the electroluminescence efficiency of 400 nm ultraviolet (UV) light emitting diodes (LED) with five In0.06Ga0.94N/GaN quantum wells. Injection current-dependent characteristics were analyzed under dc and pulsed mode operations to study the dominant factors affecting the luminescence efficiency of UV LEDs. The analysis of injection current-dependent characteristics showed that carrier overflow was the dominant factor that affects the external quantum efficiency of UV LEDs. The results show that increase in the number of quantum wells is necessary for the improvement in the carrier overflow.
Original language | English |
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Pages (from-to) | 5249-5251 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 25 |
DOIs | |
State | Published - 21 Jun 2004 |