Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application

Cheng Ta Yu; Chih Chun Shen; Han Chieh Ho; Hong Yeh Chang; Jia Shiang Fu; Heng Kuang Lin

doi:10.1109/APMC.2012.6421544

Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application

Cheng Ta Yu, Chih Chun Shen, Han Chieh Ho, Hong Yeh Chang, Jia Shiang Fu, Heng Kuang Lin

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch application. The measured 3-dB bandwidth of the proposed SPDT switch is from dc to 30 GHz. The switch features an insertion loss of less than 4 dB, and an isolation of greater than 18 dB between 10 MHz and 30 GHz. The measured input 1 dB compression point (P_1dB) and third-order intercept point (IP3) at 100 MHz are 12.5 and 27 dBm, respectively. The chip size of the proposed switch is 0.75 × 0.58 mm². These results demonstrate the outstanding potential of ABCS HEMT technology for low voltage switch applications.

Original language	English
Title of host publication	2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages	196-198
Number of pages	3
DOIs	https://doi.org/10.1109/APMC.2012.6421544
State	Published - 2012
Event	2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan Duration: 4 Dec 2012 → 7 Dec 2012

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference	2012 Asia-Pacific Microwave Conference, APMC 2012
Country/Territory	Taiwan
City	Kaohsiung
Period	4/12/12 → 7/12/12

Keywords

antimonide-based compound semiconductor (ABCS)
high electron-mobility transistor (HEMT)
monolithic microwave integrated circuit (MMIC)
switch

Access to Document

10.1109/APMC.2012.6421544

Cite this

Yu, C. T., Shen, C. C., Ho, H. C., Chang, H. Y., Fu, J. S., & Lin, H. K. (2012). Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application. In 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings (pp. 196-198). Article 6421544 (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC.2012.6421544

@inproceedings{bc68b276ccbf435b8967acf06ae010f2,

title = "Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application",

abstract = "In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch application. The measured 3-dB bandwidth of the proposed SPDT switch is from dc to 30 GHz. The switch features an insertion loss of less than 4 dB, and an isolation of greater than 18 dB between 10 MHz and 30 GHz. The measured input 1 dB compression point (P1dB) and third-order intercept point (IP3) at 100 MHz are 12.5 and 27 dBm, respectively. The chip size of the proposed switch is 0.75 × 0.58 mm2. These results demonstrate the outstanding potential of ABCS HEMT technology for low voltage switch applications.",

keywords = "antimonide-based compound semiconductor (ABCS), high electron-mobility transistor (HEMT), monolithic microwave integrated circuit (MMIC), switch",

author = "Yu, {Cheng Ta} and Shen, {Chih Chun} and Ho, {Han Chieh} and Chang, {Hong Yeh} and Fu, {Jia Shiang} and Lin, {Heng Kuang}",

year = "2012",

doi = "10.1109/APMC.2012.6421544",

language = "???core.languages.en_GB???",

isbn = "9781457713309",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

pages = "196--198",

booktitle = "2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings",

note = "2012 Asia-Pacific Microwave Conference, APMC 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

}

Yu, CT, Shen, CC, Ho, HC, Chang, HY , Fu, JS & Lin, HK 2012, Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application. in 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings., 6421544, Asia-Pacific Microwave Conference Proceedings, APMC, pp. 196-198, 2012 Asia-Pacific Microwave Conference, APMC 2012, Kaohsiung, Taiwan, 4/12/12. https://doi.org/10.1109/APMC.2012.6421544

Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application. / Yu, Cheng Ta; Shen, Chih Chun; Ho, Han Chieh et al.
2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. 2012. p. 196-198 6421544 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yu, Cheng Ta

AU - Shen, Chih Chun

AU - Ho, Han Chieh

AU - Chang, Hong Yeh

AU - Fu, Jia Shiang

AU - Lin, Heng Kuang

PY - 2012

Y1 - 2012

N2 - In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch application. The measured 3-dB bandwidth of the proposed SPDT switch is from dc to 30 GHz. The switch features an insertion loss of less than 4 dB, and an isolation of greater than 18 dB between 10 MHz and 30 GHz. The measured input 1 dB compression point (P1dB) and third-order intercept point (IP3) at 100 MHz are 12.5 and 27 dBm, respectively. The chip size of the proposed switch is 0.75 × 0.58 mm2. These results demonstrate the outstanding potential of ABCS HEMT technology for low voltage switch applications.

AB - In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch application. The measured 3-dB bandwidth of the proposed SPDT switch is from dc to 30 GHz. The switch features an insertion loss of less than 4 dB, and an isolation of greater than 18 dB between 10 MHz and 30 GHz. The measured input 1 dB compression point (P1dB) and third-order intercept point (IP3) at 100 MHz are 12.5 and 27 dBm, respectively. The chip size of the proposed switch is 0.75 × 0.58 mm2. These results demonstrate the outstanding potential of ABCS HEMT technology for low voltage switch applications.

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ER -

Yu CT, Shen CC, Ho HC, Chang HY , Fu JS, Lin HK. Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application. In 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. 2012. p. 196-198. 6421544. (Asia-Pacific Microwave Conference Proceedings, APMC). doi: 10.1109/APMC.2012.6421544

Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application

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