Low turn-on voltage and high-current InP/In0.37 Ga0.63As0.89Sb0.11/In0.53 Ga0.47As double heterojunction bipolar transistors

Shu Han Chen, Kuo Hung Teng, Hsin Yuan Chen, Sheng Yu Wang, Jen Inn Chyi

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We report on the dc and microwave characteristics of an nP/In0.37Ga0.63As0.89Sb0.11/ In0.53Ga0.47As double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic InP/In0.37Ga0.63As0.89 Sb0.11 base reduces the conduction band offset δ Ec at the emitter/base junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm2. A current gain of 125 and a peak fT of 238 GHz have been obtained on the devices with an emitter size of 1 × 10 μm2M, suggesting that a high collector average velocity and a high current capability are achieved due to the type-II lineup at the InGaAsSb/InGaAs base/collector junction.

Original languageEnglish
Pages (from-to)655-657
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - Jul 2008


  • Heterojunction bipolar transistors (HBTs)
  • InGaAsSb
  • InP
  • Type-II


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