Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition

Shih Hao Chan, Sheng Hui Chen, Wei Ting Lin, Meng Chi Li, Yung Chang Lin, Chien Cheng Kuo

Research output: Contribution to journalArticlepeer-review

67 Scopus citations


Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.

Original languageEnglish
Article number285
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Issue number1
StatePublished - 2013


  • Chemical vapor deposition
  • Graphene
  • Low temperature
  • Plasma


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