Low temperature Si layer splitting

Q. Y. Tong; T. H. Lee; L. J. Huang; Y. L. Chao; U. Gosele

Low temperature Si layer splitting

Q. Y. Tong
, T. H. Lee
, L. J. Huang
, Y. L. Chao
, U. Gosele

Department of Mechanical Engineering

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B⁺ atoms, a second implant of H₂⁺ ions were employed. Some Si wafers were implanted by H₂⁺ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.

Original language	English
Pages	126-127
Number of pages	2
State	Published - 1997
Event	Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA Duration: 6 Oct 1997 → 9 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE International SOI Conference
City	Fish Camp, CA, USA
Period	6/10/97 → 9/10/97

Cite this

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title = "Low temperature Si layer splitting",

abstract = "A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.",

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pages = "126--127",

note = "Proceedings of the 1997 IEEE International SOI Conference ; Conference date: 06-10-1997 Through 09-10-1997",

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TY - CONF

T1 - Low temperature Si layer splitting

AU - Tong, Q. Y.

AU - Lee, T. H.

AU - Huang, L. J.

AU - Chao, Y. L.

AU - Gosele, U.

PY - 1997

Y1 - 1997

N2 - A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.

AB - A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.

UR - https://www.scopus.com/pages/publications/0031383723

M3 - 會議論文

AN - SCOPUS:0031383723

SP - 126

EP - 127

T2 - Proceedings of the 1997 IEEE International SOI Conference

Y2 - 6 October 1997 through 9 October 1997

ER -

Low temperature Si layer splitting

Abstract

Conference

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