Low temperature Si layer splitting

Q. Y. Tong, T. H. Lee, L. J. Huang, Y. L. Chao, U. Gosele

Research output: Contribution to conferencePaperpeer-review

5 Scopus citations


A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.

Original languageEnglish
Number of pages2
StatePublished - 1997
EventProceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA
Duration: 6 Oct 19979 Oct 1997


ConferenceProceedings of the 1997 IEEE International SOI Conference
CityFish Camp, CA, USA


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