A smarter-cut method which employs a low temperature Si layer splitting technology was applied in boron doped Si wafers. Without a thermal treatment to activate the first implanted B+ atoms, a second implant of H2+ ions were employed. Some Si wafers were implanted by H2+ only with the same implant conditions. Compared to the H-only implanted samples, for the H+B co-implanted Si samples, the time of blister generation at a given temperature or the temperature of blister generation for a given time are ten times shorter or 50 °C lower, respectively.
|Number of pages
|Published - 1997
|Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA
Duration: 6 Oct 1997 → 9 Oct 1997
|Proceedings of the 1997 IEEE International SOI Conference
|Fish Camp, CA, USA
|6/10/97 → 9/10/97