Low-Temperature Rough-Surface Wafer Bonding with AlN/AlN Via Oxygen Plasma Activation

Keyphrases

• Oxygen Plasma Treatment 100%
• Low Temperature 100%
• Surface Roughness 100%
• Wafer 100%
• Wafer Bonding 100%
• Bonding Interface 100%
• Annealing 50%
• Oxygen Plasma 50%
• Aluminum Oxide 50%
• Oxygen Concentration 50%
• Nitrides 50%
• Microelectronics 50%
• Electron Transfer 50%
• Dehydration 50%
• Thermal Properties 50%
• Nitrogen Concentration 50%
• Hydrophilic Surface 50%
• Transition Layer 50%
• By Design 50%
• Alumina Layer 50%
• Bonding Surface 50%
• Low-temperature Annealing 50%
• Capillary Action 50%
• Direct Wafer Bonding 50%
• Ceramic Materials 50%
• Sintered Aluminum 50%
• Roughness Surface 50%
• Al Pairs 50%
• Scanning Electron Microscopy (SEM-EDS) 50%
• Excellent Dielectric Properties 50%

Material Science

• Aluminum Nitride 100%
• Rough Surface 100%
• Aluminum Oxide 14%
• Scanning Electron Microscopy 7%
• Surface Roughness 7%
• Electron Transfer 7%
• Thermal Property 7%
• Dielectric Property 7%
• Ceramic Material 7%
• Sintering 7%
• Enzymatic Hydrolysis 7%
• Annealing Temperature 7%
• Transition Layer 7%