Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

Wei Cheng Kuo, Ming Jay Lee, Mount Learn Wu, Chien Chieh Lee, I. Yu Tsao, Jenq Yang Chang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 × 10−7 A at a reverse bias of 1 V.

Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalSolid-State Electronics
Volume130
DOIs
StatePublished - 1 Apr 2017

Keywords

  • Electron cyclotron resonance chemical vapor deposition
  • Ge/Si
  • Heavy doped
  • Low temperature
  • Photodetector

Fingerprint

Dive into the research topics of 'Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors'. Together they form a unique fingerprint.

Cite this