Low surface recombination in InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Sheng Yu Wang; Pei Yi Chiang; Chao Min Chang; Shu Han Chen; Jen Inn Chyi

doi:10.1109/LED.2010.2081342

Low surface recombination in InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Sheng Yu Wang
, Pei Yi Chiang
, Chao Min Chang
, Shu Han Chen
, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density K_SURF than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S₀ is deduced for the DHBT with a higher Sb content in the InGaAsSb base.

Original language	English
Article number	5613914
Pages (from-to)	1401-1403
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/LED.2010.2081342
State	Published - Dec 2010

Keywords

Heterojunction bipolar transistors (HBTs)
InAlAs/InGaAsSb
Type-II B/C junction

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10.1109/LED.2010.2081342

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title = "Low surface recombination in InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors",

abstract = "The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density KSURF than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S0 is deduced for the DHBT with a higher Sb content in the InGaAsSb base.",

keywords = "Heterojunction bipolar transistors (HBTs), InAlAs/InGaAsSb, Type-II B/C junction",

author = "Wang, \{Sheng Yu\} and Chiang, \{Pei Yi\} and Chang, \{Chao Min\} and Chen, \{Shu Han\} and Chyi, \{Jen Inn\}",

note = "Funding Information: Manuscript received September 9, 2010; revised September 17, 2010; accepted September 20, 2010. Date of publication November 1, 2010; date of current version November 24, 2010. This work was supported in part by the Ministry of Economic Affairs under Contract 94-EC-17-A-07-S1-0001 and the National Science Council of Taiwan under Contract NSC 98-2221-E-008-099-MY3. The review of this letter was arranged by Editor J. A. del Alamo.",

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doi = "10.1109/LED.2010.2081342",

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AU - Wang, Sheng Yu

AU - Chiang, Pei Yi

AU - Chang, Chao Min

AU - Chen, Shu Han

AU - Chyi, Jen Inn

N1 - Funding Information: Manuscript received September 9, 2010; revised September 17, 2010; accepted September 20, 2010. Date of publication November 1, 2010; date of current version November 24, 2010. This work was supported in part by the Ministry of Economic Affairs under Contract 94-EC-17-A-07-S1-0001 and the National Science Council of Taiwan under Contract NSC 98-2221-E-008-099-MY3. The review of this letter was arranged by Editor J. A. del Alamo.

PY - 2010/12

Y1 - 2010/12

N2 - The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density KSURF than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S0 is deduced for the DHBT with a higher Sb content in the InGaAsSb base.

AB - The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density KSURF than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S0 is deduced for the DHBT with a higher Sb content in the InGaAsSb base.

KW - Heterojunction bipolar transistors (HBTs)

KW - InAlAs/InGaAsSb

KW - Type-II B/C junction

UR - https://www.scopus.com/pages/publications/78649448947

U2 - 10.1109/LED.2010.2081342

DO - 10.1109/LED.2010.2081342

M3 - 期刊論文

AN - SCOPUS:78649448947

SN - 0741-3106

VL - 31

SP - 1401

EP - 1403

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 5613914

ER -

Low surface recombination in InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Abstract

Keywords

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