Low surface recombination in InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Sheng Yu Wang, Pei Yi Chiang, Chao Min Chang, Shu Han Chen, Jen Inn Chyi

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5 Scopus citations

Abstract

The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density KSURF than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S0 is deduced for the DHBT with a higher Sb content in the InGaAsSb base.

Original languageEnglish
Article number5613914
Pages (from-to)1401-1403
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
StatePublished - Dec 2010

Keywords

  • Heterojunction bipolar transistors (HBTs)
  • InAlAs/InGaAsSb
  • Type-II B/C junction

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