Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer

Kuang Po Hsueh, Yue Ming Hsin, Jinn Kong Sheu

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Abstract

The p -type AlInGaN and InGaN contact layers were regrown on the etched p-GaN to study the NiAu contact current-voltage (I-V) characteristics. The thickness of the contact layer was 100 nm and regrown by metalorganic chemical vapor deposition. By using the regrown contact layer on etched p-GaN, Schottky barrier height (SBH) from the I-V characterization was reduced. The SBH of 0.65 eV from the contact to the etched p-GaN was reduced to 0.56 eV and 0.58 eV, respectively, after the AlInGaN and InGaN contact layers were formed. In addition to the I-V characterization of NiAu contacts, surface morphology and x-ray analysis were studied.

Original languageEnglish
Article number026106
JournalJournal of Applied Physics
Volume99
Issue number2
DOIs
StatePublished - 15 Jan 2006

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