In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|State||Published - 28 Jul 2015|
- A1. Doping
- A3. Molecular beam epitaxy
- B1. Oxides
- B2. Semiconducting II-VI materials