Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

Cheng Yu Chen; Li Han Hsiao; Jen Inn Chyi

doi:10.1016/j.jcrysgro.2015.02.034

Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

Cheng Yu Chen, Li Han Hsiao, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10^-4 Ω cm have been successfully demonstrated.

Original language	English
Pages (from-to)	216-220
Number of pages	5
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.034
State	Published - 28 Jul 2015

Keywords

A1. Doping
A3. Molecular beam epitaxy
B1. Oxides
B2. Semiconducting II-VI materials

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title = "Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy",

abstract = "In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.",

keywords = "A1. Doping, A3. Molecular beam epitaxy, B1. Oxides, B2. Semiconducting II-VI materials",

author = "Chen, {Cheng Yu} and Hsiao, {Li Han} and Chyi, {Jen Inn}",

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T1 - Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

AU - Chen, Cheng Yu

AU - Hsiao, Li Han

AU - Chyi, Jen Inn

PY - 2015/7/28

Y1 - 2015/7/28

N2 - In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.

AB - In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10-4 Ω cm have been successfully demonstrated.

KW - A1. Doping

KW - A3. Molecular beam epitaxy

KW - B1. Oxides

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=84979959421&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2015.02.034

DO - 10.1016/j.jcrysgro.2015.02.034

M3 - 期刊論文

AN - SCOPUS:84979959421

SN - 0022-0248

VL - 425

SP - 216

EP - 220

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

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Keywords

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