Low resistance WSi x-based ohmic contacts on n-type GaN

Chang Chi Pan, Ming Shung Chen, Chia Ming Lee, Jen Inn Chyi

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4 Scopus citations


Low contact resistance, high reflectivity, and high thermal stability TiW Six TiAu multilayer ohmic contact to n -type GaN has been demonstrated. Specific contact resistivity as low as 1× 10-6 Ω cm2 is obtained in a metallization scheme of TiW Si0.05 TiAu (204020200 nm) after thermal annealing at 800 °C for 3 min in N2 ambient. Its specific contact resistivity maintains at the same level after heat treatment at 300 °C for 96 h. In addition, the optical reflectivity in the wavelength range of 350-450 nm is about twofold higher than that of the conventional TiAlTiAu (3010040120 nm) contact. The former also exhibits much smoother surface and better edge acuity, which is essential for devices sensitive to critical dimension control.

Original languageEnglish
Article number013712
JournalJournal of Applied Physics
Issue number1
StatePublished - 1 Jul 2005


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