Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contact to AlGaN/GaN heterostructures

Yung Ling Lan; Hung Cheng Lin; Hsueh Hsing Liu; Geng Yen Lee; Fan Ren; Stephen J. Pearton; Mao Nan Chang; Jen Inn Chyi

doi:10.1063/1.3155195

Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contact to AlGaN/GaN heterostructures

Yung Ling Lan, Hung Cheng Lin, Hsueh Hsing Liu, Geng Yen Lee, Fan Ren, Stephen J. Pearton, Mao Nan Chang, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A comparative study of the specific contact resistivity and surface morphology of Ti/Al/Ni/Au, Ti/Cr/Mo/Au, and Ti/Al/Cr/Mo/Au metal contact stacks on AlGaN/GaN heterostructures is reported. Compared to the conventional Ti/Al/Ni/Au contact, the Ti/Al/Cr/Mo/Au contact has much smoother surface and achieves minimum specific contact resistivity of 1.1× 10-6 cm2. This contact maintains its low contact resistivity after storage at 200 °C for 100 h in N2. The robustness of this contact is attributed to the Cr and Mo layers, which suppress the formation of Al-Au alloys in the contact stack.

Original language	English
Article number	243502
Journal	Applied Physics Letters
Volume	94
Issue number	24
DOIs	https://doi.org/10.1063/1.3155195
State	Published - 2009

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@article{a2881198781a47a9bf9181507a059ae9,

title = "Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contact to AlGaN/GaN heterostructures",

abstract = "A comparative study of the specific contact resistivity and surface morphology of Ti/Al/Ni/Au, Ti/Cr/Mo/Au, and Ti/Al/Cr/Mo/Au metal contact stacks on AlGaN/GaN heterostructures is reported. Compared to the conventional Ti/Al/Ni/Au contact, the Ti/Al/Cr/Mo/Au contact has much smoother surface and achieves minimum specific contact resistivity of 1.1× 10-6 cm2. This contact maintains its low contact resistivity after storage at 200 °C for 100 h in N2. The robustness of this contact is attributed to the Cr and Mo layers, which suppress the formation of Al-Au alloys in the contact stack.",

author = "Lan, {Yung Ling} and Lin, {Hung Cheng} and Liu, {Hsueh Hsing} and Lee, {Geng Yen} and Fan Ren and Pearton, {Stephen J.} and Chang, {Mao Nan} and Chyi, {Jen Inn}",

note = "Funding Information: This work is partially supported by the National Science Council of the Republic of China, Taiwan, under Contract No. NSC 96-2628-E-008-072-MY3.",

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volume = "94",

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TY - JOUR

T1 - Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contact to AlGaN/GaN heterostructures

AU - Lan, Yung Ling

AU - Lin, Hung Cheng

AU - Liu, Hsueh Hsing

AU - Lee, Geng Yen

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Chang, Mao Nan

AU - Chyi, Jen Inn

N1 - Funding Information: This work is partially supported by the National Science Council of the Republic of China, Taiwan, under Contract No. NSC 96-2628-E-008-072-MY3.

PY - 2009

Y1 - 2009

N2 - A comparative study of the specific contact resistivity and surface morphology of Ti/Al/Ni/Au, Ti/Cr/Mo/Au, and Ti/Al/Cr/Mo/Au metal contact stacks on AlGaN/GaN heterostructures is reported. Compared to the conventional Ti/Al/Ni/Au contact, the Ti/Al/Cr/Mo/Au contact has much smoother surface and achieves minimum specific contact resistivity of 1.1× 10-6 cm2. This contact maintains its low contact resistivity after storage at 200 °C for 100 h in N2. The robustness of this contact is attributed to the Cr and Mo layers, which suppress the formation of Al-Au alloys in the contact stack.

AB - A comparative study of the specific contact resistivity and surface morphology of Ti/Al/Ni/Au, Ti/Cr/Mo/Au, and Ti/Al/Cr/Mo/Au metal contact stacks on AlGaN/GaN heterostructures is reported. Compared to the conventional Ti/Al/Ni/Au contact, the Ti/Al/Cr/Mo/Au contact has much smoother surface and achieves minimum specific contact resistivity of 1.1× 10-6 cm2. This contact maintains its low contact resistivity after storage at 200 °C for 100 h in N2. The robustness of this contact is attributed to the Cr and Mo layers, which suppress the formation of Al-Au alloys in the contact stack.

UR - http://www.scopus.com/inward/record.url?scp=67649173350&partnerID=8YFLogxK

U2 - 10.1063/1.3155195

DO - 10.1063/1.3155195

M3 - 期刊論文

AN - SCOPUS:67649173350

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 243502

ER -

Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contact to AlGaN/GaN heterostructures

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