LOW-leakage INAS/ALSB hemt with high FT-LG product

Yu Chao Lin; Ta Wei Fan; Heng Kuang Lin; Pei Chin Chiu; Jen Inn Chyi; Chih Hsin Ko; Ta Ming Kuan; Meng Kuei Hsieh; Wen Chin Lee; Clement H. Wann

doi:10.1109/ICIPRM.2009.5012509

LOW-leakage INAS/ALSB hemt with high F_T-L_G product

Yu Chao Lin, Ta Wei Fan, Heng Kuang Lin, Pei Chin Chiu, Jen Inn Chyi, Chih Hsin Ko, Ta Ming Kuan, Meng Kuei Hsieh, Wen Chin Lee, Clement H. Wann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Conventional InAs/AlSb HEMTs suffer high gate leakage and incomplete pinch-off issues due to instable chemical property of the AlSb and GaSb materials though their excellent performance and circuit application have already been demonstrated. Based on the concerns, we proposed a two-step passivation process for minimizing the negative effect based on developed high-quality InAs/AlSb HEMT materials by solid-sourcemolecular beam epitaxy. Improved device performance is observed.

Original language	English
Title of host publication	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages	330-333
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2009.5012509
State	Published - 2009
Event	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States Duration: 10 May 2009 → 14 May 2009

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Country/Territory	United States
City	Newport Beach, CA
Period	10/05/09 → 14/05/09

Keywords

High electron mobility transistor (HEMT)
InAs/AlSb

Access to Document

10.1109/ICIPRM.2009.5012509

Cite this

Lin, Y. C., Fan, T. W., Lin, H. K., Chiu, P. C., Chyi, J. I., Ko, C. H., Kuan, T. M., Hsieh, M. K., Lee, W. C., & Wann, C. H. (2009). LOW-leakage INAS/ALSB hemt with high F_T-L_G product. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 330-333). Article 5012509 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012509

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title = "LOW-leakage INAS/ALSB hemt with high FT-LG product",

abstract = "Conventional InAs/AlSb HEMTs suffer high gate leakage and incomplete pinch-off issues due to instable chemical property of the AlSb and GaSb materials though their excellent performance and circuit application have already been demonstrated. Based on the concerns, we proposed a two-step passivation process for minimizing the negative effect based on developed high-quality InAs/AlSb HEMT materials by solid-sourcemolecular beam epitaxy. Improved device performance is observed.",

keywords = "High electron mobility transistor (HEMT), InAs/AlSb",

author = "Lin, {Yu Chao} and Fan, {Ta Wei} and Lin, {Heng Kuang} and Chiu, {Pei Chin} and Chyi, {Jen Inn} and Ko, {Chih Hsin} and Kuan, {Ta Ming} and Hsieh, {Meng Kuei} and Lee, {Wen Chin} and Wann, {Clement H.}",

year = "2009",

doi = "10.1109/ICIPRM.2009.5012509",

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isbn = "9781424434336",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "330--333",

booktitle = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009",

note = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 ; Conference date: 10-05-2009 Through 14-05-2009",

}

Lin, YC, Fan, TW, Lin, HK, Chiu, PC, Chyi, JI, Ko, CH, Kuan, TM, Hsieh, MK, Lee, WC & Wann, CH 2009, LOW-leakage INAS/ALSB hemt with high F_T-L_G product. in IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009., 5012509, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 330-333, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, Newport Beach, CA, United States, 10/05/09. https://doi.org/10.1109/ICIPRM.2009.5012509

LOW-leakage INAS/ALSB hemt with high F_T-L_G product. / Lin, Yu Chao; Fan, Ta Wei; Lin, Heng Kuang et al.
IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 330-333 5012509 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lin, Yu Chao

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AU - Lin, Heng Kuang

AU - Chiu, Pei Chin

AU - Chyi, Jen Inn

AU - Ko, Chih Hsin

AU - Kuan, Ta Ming

AU - Hsieh, Meng Kuei

AU - Lee, Wen Chin

AU - Wann, Clement H.

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AB - Conventional InAs/AlSb HEMTs suffer high gate leakage and incomplete pinch-off issues due to instable chemical property of the AlSb and GaSb materials though their excellent performance and circuit application have already been demonstrated. Based on the concerns, we proposed a two-step passivation process for minimizing the negative effect based on developed high-quality InAs/AlSb HEMT materials by solid-sourcemolecular beam epitaxy. Improved device performance is observed.

KW - High electron mobility transistor (HEMT)

KW - InAs/AlSb

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BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

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