Low-I RESET unipolar HfO 2 RRAM and tunable resistive-switching mode via interface engineering

Kuan Liang Lin, Tuo Hung Hou, Yao Jen Lee, Jun Hung Lin, Jhe Wei Chang, Jiann Shieh, Cheng Tung Chou, Wen Hsiung Chang, Wen Yueh Jang, Chen Hsi Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation nonvolatile memory (NVM) due to its low-voltage operation, fast switching speed and high-density integration [1]. Two common resistive switching (RS) modes in RRAM are unipolar and bipolar modes [2]. A unipolar RRAM in series with a rectifying diode, so-called one diode-one resistor (1D1R) cell, is particularly attractive for high-density applications because of the minimal 4F 2 cell size [3]. However, high RESET current (I RESET) impedes the cell size scaling in 1D1R array. Recently, we have demonstrated a reliable Ni/HfO 2/Si unipolar RRAM, fully compatible with the Si technology [4, 5]. In this paper, we show that unipolar HfO 2 RRAM exhibits excellent NVM characteristics promising for low-I RESET, low-power operation in the future high-density 1D1R array. In addition, we show that the RS mode can be tailored by a bottom interfacial layer of Al 2O 3 between HfO 2 and Si. New evidence on the location of filament connections/ruptures and RS mechanism will be discussed in details.

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 7 Dec 20119 Dec 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Conference

Conference2011 International Semiconductor Device Research Symposium, ISDRS 2011
Country/TerritoryUnited States
CityCollege Park, MD
Period7/12/119/12/11

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