Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

Keyphrases

• GaN HEMT 100%
• P-GaN 100%
• Low-frequency Noise 100%
• Noise Characterization 100%
• Generation-recombination Noise 66%
• Noise Spectral Density 66%
• AlGaN-GaN 33%
• Activation Energy 33%
• Si Substrate 33%
• Linear Region 33%
• SiC Substrate 33%
• Noise Characteristics 33%
• GaN Buffer 33%
• Noise Behavior 33%
• Carrier number Fluctuations 33%
• Flicker Noise 33%
• Dominant Cause 33%
• Charge Trapping-detrapping 33%
• Deep Acceptor 33%
• Spatial Charge 33%

Engineering

• Frequency Noise 100%
• Noise Characterization 100%
• Noise Power Spectral Density 100%
• Activation Energy 50%
• Si Substrate 50%
• Buffer Layer 50%
• Linear Region 50%
• Flicker Noise 50%

Material Science

• Density 100%
• Transistor 50%
• Activation Energy 50%
• Buffer Layer 50%
• Electron Mobility 50%
• Charge Trapping 50%