Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas

I. Lin; L. W. Ting

doi:10.1063/1.100493

Low-energy ion-enhanced deposition of SiO₂ in rf magnetron plasmas

I. Lin, L. W. Ting

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A novel low-temperature (<50°C) deposition process of a thin SiO₂ film in a low-energy "rf hollow oval magnetron" system was studied. O₂ is directly mixed with SiH₄ and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (10¹¹ cm^-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO₂), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH₄ /O₂ flow rates and their ratio.

Original language	English
Pages (from-to)	2030-2032
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	21
DOIs	https://doi.org/10.1063/1.100493
State	Published - 1988

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title = "Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas",

abstract = "A novel low-temperature (<50°C) deposition process of a thin SiO2 film in a low-energy {"}rf hollow oval magnetron{"} system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 {\AA}/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.",

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T1 - Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas

AU - Lin, I.

AU - Ting, L. W.

PY - 1988

Y1 - 1988

N2 - A novel low-temperature (<50°C) deposition process of a thin SiO2 film in a low-energy "rf hollow oval magnetron" system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.

AB - A novel low-temperature (<50°C) deposition process of a thin SiO2 film in a low-energy "rf hollow oval magnetron" system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm-3) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.

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DO - 10.1063/1.100493

M3 - 期刊論文

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VL - 53

SP - 2030

EP - 2032

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas

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Low-energy ion-enhanced deposition of SiO₂ in rf magnetron plasmas