Low-energy high flux reactive ion etching by rf magnetron plasma

I. Lin, D. C. Hinson, W. H. Class, R. L. Sandstrom

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


The magnetron plasma etching of SiO2 and Si in fluorocarbon gas has been investigated. The plasma has high ionization degree, collisionless high density, and low energy ion flux (I∼1.0 mA/cm2, 30≲E i ≲250 eV at 1 W/cm2) and a controllable etch uniformity. The bulk of the plasma supports an electric field which can be shaped to achieve normal ion bombardment of the etching surface. Good etching anisotropy, high SiO2/Si selectivity, and rates six times greater than conventional reactive ion etching were demonstrated.

Original languageEnglish
Pages (from-to)185-187
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - 1984


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