Low dark current and high linearity InGaAs MSM photodetectors

J. I. Chyi, T. S. Wei, J. W. Hong, W. Lin, Y. K. Tu

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55μm wavelength varies between 0.21 and 0.43 A/ W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44μA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.

Original languageEnglish
Pages (from-to)355-356
Number of pages2
JournalElectronics Letters
Issue number4
StatePublished - 1994


  • Metal-semiconductor-metal structures
  • Photodetectors


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