Low dark current and high linearity InGaAs MSM photodetectors

J. I. Chyi; T. S. Wei; J. W. Hong; W. Lin; Y. K. Tu

doi:10.1049/el:19940215

Low dark current and high linearity InGaAs MSM photodetectors

J. I. Chyi, T. S. Wei, J. W. Hong, W. Lin, Y. K. Tu

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55μm wavelength varies between 0.21 and 0.43 A/ W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In_0.9Ga_0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44μA/cm². The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.

Original language	English
Pages (from-to)	355-356
Number of pages	2
Journal	Electronics Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1049/el:19940215
State	Published - 1994

Keywords

Metal-semiconductor-metal structures
Photodetectors

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10.1049/el:19940215

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title = "Low dark current and high linearity InGaAs MSM photodetectors",

abstract = "InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55μm wavelength varies between 0.21 and 0.43 A/ W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44μA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.",

keywords = "Metal-semiconductor-metal structures, Photodetectors",

author = "Chyi, {J. I.} and Wei, {T. S.} and Hong, {J. W.} and W. Lin and Tu, {Y. K.}",

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T1 - Low dark current and high linearity InGaAs MSM photodetectors

AU - Chyi, J. I.

AU - Wei, T. S.

AU - Hong, J. W.

AU - Lin, W.

AU - Tu, Y. K.

PY - 1994

Y1 - 1994

N2 - InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55μm wavelength varies between 0.21 and 0.43 A/ W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44μA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.

AB - InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55μm wavelength varies between 0.21 and 0.43 A/ W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44μA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level.

KW - Metal-semiconductor-metal structures

KW - Photodetectors

UR - http://www.scopus.com/inward/record.url?scp=0028374801&partnerID=8YFLogxK

U2 - 10.1049/el:19940215

DO - 10.1049/el:19940215

M3 - 期刊論文

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SN - 0013-5194

VL - 30

SP - 355

EP - 356

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Low dark current and high linearity InGaAs MSM photodetectors

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Keywords

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