Low Damage, Cl₂-Based Gate Recess Etching for 0.3-μm Gate-Length AlGaN/GaN HEMT Fabrication

Keyphrases

• Aluminum Gallium Nitride (AlGaN) 33%
• CH 4 33%
• CH4 Gas 33%
• Dry Etching 33%
• Etch Selectivity 33%
• Fmax 33%
• GaN HEMT 100%
• GaN Material 33%
• Gas Mixture 33%
• Gate Length 100%
• Gate Recess 100%
• High Etching Selectivity 33%
• Low Damage 100%
• Rapid Thermal Annealing 33%
• Reactive Ion Etching 33%
• Recess Etching 100%
• Surface Damage 100%
• Surface Low 33%
• Surface Properties 33%
• Transconductance 33%

Material Science

• Dry Etching 33%
• Gas Mixture 33%
• Reactive Ion Etching 33%
• Surface Damage 100%
• Surface Property 33%