Low Damage, Cl2-Based Gate Recess Etching for 0.3-μm Gate-Length AlGaN/GaN HEMT Fabrication

Wen Kai Wang, Yu Jen Li, Cheng Kuo Lin, Yi Jen Chan, Guan Ting Chen, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


The traditional dry etching for GaN using the Ar/Cl2 mixture gas in the reactive ion etching system has been developed. In order to reduce the surface damage, the additional CH4 gas is introduced. However, this approach still has the problems of the residual surface damage and low etching selectivity between the AlGaN and GaN materials. Therefore, the following rapid thermal annealing (RTA) at 700°C is necessary to recover the surface properties. In this study, we proposed the Ar/Cl2/CH 4/O2 for the GaN gate-recess etching in AlGaN/GaN HEMTs fabrication, which achieves a low surface damage and a high etching selectivity simultaneously. The 0.3 μm gate-length AlGaN/GaN HEMTs present a transconductance of 230 mS/mm, an fTr of 48 GHz, and fmax of 60 GHz, respectively.

Original languageEnglish
Pages (from-to)52-54
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 2004


  • AlGaN/GaN HEMT
  • Cl-based plasma
  • Reactive ion etching (RIE) recess etching


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