Low current-blocking InGaAs/InP DHBT grown by solid-source MBE

Shu Han Chen, Meng Lin Lee, Ming Yuan Tseng, Wei Sheng Liu, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Double heterojunction bipolar transistor (DHBT) of InP and related materials is getting more attention due to its potential applications in 40 Gbps optical communications and low voltage radio frequency integration circuits. For these applications, the DHBT has to have low offset voltage, high breakdown voltage while with low current blocking effect. In this work, we have demonstrated that InGaAs/InP DHBT satisfying the aforementioned characteristics can be obtained by using InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. Since the epilayers are grown by solid source molecular beam epitaxy, the Be-doped base layer is of high carrier concentration, which is shown to be effective in reducing the current blocking effect.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages95-96
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 15 Sep 200220 Sep 2002

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/TerritoryUnited States
CitySan Francisco
Period15/09/0220/09/02

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