Low-κ BCB passivation on AlGaN-GaN HEMT fabrication

Wen Kai Wang, Ching Huao Lin, Po Chen Lin, Cheng Kuo Lin, Fan Hsiu Huang, Yi Jen Chan, Guan Ting Chen, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Due to the stress-induced polarization effect on the GaN HEMTs, the surface passivation of the device is critical and is deserved to conduct a detailed study. It has been proven that the GaN HEMTs demonstrate nondispersive pulsed current-voltage (I-V) characteristics and better microwave power performances after passivating the Si3N 4 film on the GaN surface. In this letter, we proposed to use the BCB material, a negative photoresist with a low-κ characteristic, as the surface passivation layer on GaN HEMTs fabrication. After comparing the dc I-V, pulsed I-V, RF small-signal, microwave power characteristics, and device reliability, this BCB-passivated GaN HEMT achieved better performance than the Si 3N4 passivated device.

Original languageEnglish
Pages (from-to)763-765
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number12
DOIs
StatePublished - Dec 2004

Keywords

  • Benzocyclobutene (BCB) passivation
  • GaN HEMT
  • Reliability

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