In0.52Al0.48As/InxGa1-XAs(X=0.53 lattice-matched, and X=0.6 pseudomorphic) high electron mobility transistor (HEMT) structures are grown by a Riber-32PMBE system on (100) InP:Fe substrates. Devices with the gate-length of 0.8μm show excellent channel pinch-olf characteristics from the, Ids-Vds curves. The saturation current density biased at VgJ=0.5V is 480 mA/mm for HEMTs(x=0.53) and 550 mA/ mm for pseudomorphic-(PHEMTs, x=0.6). A peak extrinsic DC transconductance (gm) increases from 342 mS/mm to 395 mS/mm as the In composition increases from 53% to 60% for In0.52Al0.48As/InxGa1-XAs InJGa1.JAs HEMTs. Microwave characteristics demonstrate that a current gain cutoff frequency (fT) also increases from 22 GHz to 25 GHz and a maximum oscillation frequency (fmax) increases from 60 GHz to 83 GHz, at 300K. This demonstrates that with the increase of In content in InxGa1-xAs channels, device performance is dramatically enhanced, which can be used for microwave circuit applications.
|Number of pages||6|
|Journal||Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an|
|State||Published - Jul 1995|