Linearity of algan/gan hemts with different gate-to-source length

Yi Nan Zhong, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, the performance of AlGaN/GaN HEMTs with different gate-to-source length (LGS) and with a fixed distance of drain-to-source (LDS) is presented. The increase in LGS makes the source resistance (RS) increase. In general, the larger the resistance, the better the linearity and stability in the power amplifier, thereby these devices were used to study and compare the device characteristics. According to output 3rd order intercept (OIP3), there is no linear trend in the linearity with related to the LGS and RS. The optimal layout for the different geometry in this study is the device with gate width of 250 μm and LGS of 1.325 μm.

Original languageEnglish
Title of host publicationWiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728121451
DOIs
StatePublished - May 2019
Event2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019 - Taipei, Taiwan
Duration: 23 May 201925 May 2019

Publication series

NameWiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2019
Country/TerritoryTaiwan
CityTaipei
Period23/05/1925/05/19

Keywords

  • Gan
  • Gate-to-source length
  • Linearity

Fingerprint

Dive into the research topics of 'Linearity of algan/gan hemts with different gate-to-source length'. Together they form a unique fingerprint.

Cite this