Light output enhancement of near UV-LED by using Ti-doped ITO transparent conducting layer

Yung Hsun Lin, Y. S. Liu, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

With Ti doping, the transmittance of indiumtinoxide (ITO) thin film is greatly enhanced in near the ultraviolet (UV) range. After annealing at 500 °C in vacuum, the transmittance of Ti-doped ITO (Ti:ITO) thin film at 380 nm is larger than that of pure ITO thin film by 22%. And, the resistivity of annealed Ti:ITO thin film is equivalent with that of ITO thin film (4.248× 10-4Ω · cm). Using Ti:ITO as TCL, the light output power of UV light-emitting diode (LED) is enhanced by 52.1%, compared to UV-LED (380 nm) with an ITO transparent conducting layer.

Original languageEnglish
Article number5504116
Pages (from-to)1443-1445
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number19
DOIs
StatePublished - 2010

Keywords

  • contact resistance
  • indium-tin-oxide (ITO)
  • light-emitting diodes (LEDs)
  • ultraviolet (UV) sources

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