Light output enhancement of InGaN light-emitting diodes grown on Masklessly etched sapphire substrates

Hung Cheng Lin, Ruo Syuan Lin, Jen Inn Chyi, Chia Ming Lee

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

A maskless wet-etching method is used to prepare patterned sapphire substrates for enhancing the output power of InGaN light-emitting diodes (LEDs). Blue LEDs grown on the patterned sapphire substrates exhibit an output power of 24.9 mW, which is 19.4% higher than that of the devices grown on flat substrates. The uniformity of the optical and electrical properties of LEDs across a 2-in wafer is slightly improved as well.

Original languageEnglish
Pages (from-to)1621-1623
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number19
DOIs
StatePublished - 2008

Keywords

  • GaN
  • InGaN
  • Light-emitting diodes (LEDs)
  • Patterned sapphire

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