Abstract
Creating a pyramidal structure on an n-GaN surface is considered the most effective approach for maximizing light extraction of n-side-up GaN-based light-emitting diodes (LEDs). This letter shows that the light extraction efficiency of a pyramidal n-GaN surface can be further enhanced by growing ZnO nano-rods (NRs) specifically on the tips of the pyramids on the n-GaN surface. Using tip-only ZnO NRs, the light-output power of an n-side-up LED with a pyramidal n-GaN surface can be further enhanced by 49.6% at 250 mA. This improved light extraction efficiency is due to the multiple facets on the ZnO NRs.
Original language | English |
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Article number | 6573355 |
Pages (from-to) | 1774-1777 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 25 |
Issue number | 18 |
DOIs | |
State | Published - 2013 |
Keywords
- Hydrothermal
- ZnO
- nano-rods
- nanotechnology
- surface roughening