Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n -GaN surface of thin-GaN light-emitting diodes

C. L. Lin, P. H. Chen, Chia Hua Chan, C. C. Lee, Chii Chang Chen, Jeng Yang Chang, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

By using a micron polystyrene ball array as a template, an Al oxide honeycomb structure was produced on the n -GaN surface of a thin-GaN light-emitting diode (LED). The Al oxide honeycomb structure consists of the networking hexagonal Al oxide nanowall. With the Al oxide honeycomb nanostructure, the total lighting output of thin-GaN LED was enhanced by 35%. The authors believe that the networking nanowall of the Al oxide honeycomb structure acted as a waveguide to extract the light emitted to the outer medium effectively.

Original languageEnglish
Article number242106
JournalApplied Physics Letters
Volume90
Issue number24
DOIs
StatePublished - 2007

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