Light-emitting diodes with nickel substrates fabricated by electroplating

P. H. Chang; N. C. Chen; Y. N. Wang; C. F. Shih; M. H. Wu; T. H. Yang; Y. H. Tzou; S. J. Wang

doi:10.1116/1.2110280

Light-emitting diodes with nickel substrates fabricated by electroplating

P. H. Chang, N. C. Chen, Y. N. Wang, C. F. Shih, M. H. Wu, T. H. Yang, Y. H. Tzou, S. J. Wang

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.

Original language	English
Pages (from-to)	L22-L24
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	6
DOIs	https://doi.org/10.1116/1.2110280
State	Published - Nov 2005

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title = "Light-emitting diodes with nickel substrates fabricated by electroplating",

abstract = "AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.",

author = "Chang, {P. H.} and Chen, {N. C.} and Wang, {Y. N.} and Shih, {C. F.} and Wu, {M. H.} and Yang, {T. H.} and Tzou, {Y. H.} and Wang, {S. J.}",

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TY - JOUR

T1 - Light-emitting diodes with nickel substrates fabricated by electroplating

AU - Chang, P. H.

AU - Chen, N. C.

AU - Wang, Y. N.

AU - Shih, C. F.

AU - Wu, M. H.

AU - Yang, T. H.

AU - Tzou, Y. H.

AU - Wang, S. J.

PY - 2005/11

Y1 - 2005/11

N2 - AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.

AB - AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate. After removing or thinning the GaAs substrate and coating a AuGe layer, a 60 μm thick nickel layer was electroplated on the AuGe surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared to LEDs with a GaAs substrate, an increase in the light output by up to 88% has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 °C and 50 mA.

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U2 - 10.1116/1.2110280

DO - 10.1116/1.2110280

M3 - 期刊論文

AN - SCOPUS:29044443752

SN - 1071-1023

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SP - L22-L24

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Light-emitting diodes with nickel substrates fabricated by electroplating

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