LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

Y. K. Tang, Y. C. Hsu, E. J. Lin, Y. J. Hu, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

Original languageEnglish
Pages (from-to)6171-6176
Number of pages6
JournalJournal of Electronic Materials
Volume45
Issue number12
DOIs
StatePublished - 1 Dec 2016

Keywords

  • die strength
  • Die-attachment
  • lead-free solder
  • partial pressure
  • Sn-Bi-Zn solder

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