LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

Y. K. Tang; Y. C. Hsu; E. J. Lin; Y. J. Hu; C. Y. Liu

doi:10.1007/s11664-016-4885-7

LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

Y. K. Tang, Y. C. Hsu, E. J. Lin, Y. J. Hu, C. Y. Liu

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

Original language	English
Pages (from-to)	6171-6176
Number of pages	6
Journal	Journal of Electronic Materials
Volume	45
Issue number	12
DOIs	https://doi.org/10.1007/s11664-016-4885-7
State	Published - 1 Dec 2016

Keywords

die strength
Die-attachment
lead-free solder
partial pressure
Sn-Bi-Zn solder

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title = "LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System",

abstract = "In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.",

keywords = "die strength, Die-attachment, lead-free solder, partial pressure, Sn-Bi-Zn solder",

author = "Tang, {Y. K.} and Hsu, {Y. C.} and Lin, {E. J.} and Hu, {Y. J.} and Liu, {C. Y.}",

note = "Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

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T1 - LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

AU - Tang, Y. K.

AU - Hsu, Y. C.

AU - Lin, E. J.

AU - Hu, Y. J.

AU - Liu, C. Y.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

AB - In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

KW - die strength

KW - Die-attachment

KW - lead-free solder

KW - partial pressure

KW - Sn-Bi-Zn solder

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U2 - 10.1007/s11664-016-4885-7

DO - 10.1007/s11664-016-4885-7

M3 - 期刊論文

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VL - 45

SP - 6171

EP - 6176

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 12

ER -

LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

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