Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation

Y. Y. Yang, C. H. Huang, Y. K. Hsu, S. J. Jeng, C. C. Tai, S. Lee, H. W. Chen, Q. Gan, C. S. Chu, J. H. Ting, C. S. Lai, T. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


"Thermal-microwave co-activation process" is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto an insulator at low temperature. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at 200 degree centigrade anneal temperature to successfully achieve a completely 8" transferred layer within 5 minutes. The result of this experiment demonstrates Thermal- microwave co-activation effective to excite hydrogen ions implanted in silicon to increase not only kinetic energy but also mobility. Finally, the surface roughness of transferred layer and the quality of bonded interface were analyzed by AFM and TEM.

Original languageEnglish
Title of host publicationTransistor Scaling-Methods, Materials and Modeling
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558998691, 9781558998698
StatePublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 17 Apr 200621 Apr 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2006 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA


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