Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation

Y. Y. Yang; C. H. Huang; Y. K. Hsu; S. J. Jeng; C. C. Tai; S. Lee; H. W. Chen; Q. Gan; C. S. Chu; J. H. Ting; C. S. Lai; T. H. Lee

doi:10.1557/proc-0913-d03-13

Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation

Y. Y. Yang, C. H. Huang, Y. K. Hsu, S. J. Jeng, C. C. Tai, S. Lee, H. W. Chen, Q. Gan, C. S. Chu, J. H. Ting, C. S. Lai, T. H. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

"Thermal-microwave co-activation process" is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto an insulator at low temperature. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at 200 degree centigrade anneal temperature to successfully achieve a completely 8" transferred layer within 5 minutes. The result of this experiment demonstrates Thermal- microwave co-activation effective to excite hydrogen ions implanted in silicon to increase not only kinetic energy but also mobility. Finally, the surface roughness of transferred layer and the quality of bonded interface were analyzed by AFM and TEM.

Original language	English
Title of host publication	Transistor Scaling-Methods, Materials and Modeling
Publisher	Materials Research Society
Pages	111-116
Number of pages	6
ISBN (Print)	1558998691, 9781558998698
DOIs	https://doi.org/10.1557/proc-0913-d03-13
State	Published - 2006
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: 17 Apr 2006 → 21 Apr 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	913
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	17/04/06 → 21/04/06

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10.1557/proc-0913-d03-13

Cite this

Yang, Y. Y., Huang, C. H., Hsu, Y. K., Jeng, S. J., Tai, C. C., Lee, S., Chen, H. W., Gan, Q., Chu, C. S., Ting, J. H., Lai, C. S., & Lee, T. H. (2006). Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation. In Transistor Scaling-Methods, Materials and Modeling (pp. 111-116). (Materials Research Society Symposium Proceedings; Vol. 913). Materials Research Society. https://doi.org/10.1557/proc-0913-d03-13

@inproceedings{029a043a81cc419a8f424638b003ab5f,

title = "Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation",

abstract = "{"}Thermal-microwave co-activation process{"} is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto an insulator at low temperature. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at 200 degree centigrade anneal temperature to successfully achieve a completely 8{"} transferred layer within 5 minutes. The result of this experiment demonstrates Thermal- microwave co-activation effective to excite hydrogen ions implanted in silicon to increase not only kinetic energy but also mobility. Finally, the surface roughness of transferred layer and the quality of bonded interface were analyzed by AFM and TEM.",

author = "Yang, {Y. Y.} and Huang, {C. H.} and Hsu, {Y. K.} and Jeng, {S. J.} and Tai, {C. C.} and S. Lee and Chen, {H. W.} and Q. Gan and Chu, {C. S.} and Ting, {J. H.} and Lai, {C. S.} and Lee, {T. H.}",

year = "2006",

doi = "10.1557/proc-0913-d03-13",

language = "???core.languages.en_GB???",

isbn = "1558998691",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "111--116",

booktitle = "Transistor Scaling-Methods, Materials and Modeling",

note = "2006 MRS Spring Meeting ; Conference date: 17-04-2006 Through 21-04-2006",

}

Yang, YY, Huang, CH, Hsu, YK, Jeng, SJ, Tai, CC, Lee, S, Chen, HW, Gan, Q, Chu, CS, Ting, JH, Lai, CS & Lee, TH 2006, Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation. in Transistor Scaling-Methods, Materials and Modeling. Materials Research Society Symposium Proceedings, vol. 913, Materials Research Society, pp. 111-116, 2006 MRS Spring Meeting, San Francisco, CA, United States, 17/04/06. https://doi.org/10.1557/proc-0913-d03-13

Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation. / Yang, Y. Y.; Huang, C. H.; Hsu, Y. K. et al.
Transistor Scaling-Methods, Materials and Modeling. Materials Research Society, 2006. p. 111-116 (Materials Research Society Symposium Proceedings; Vol. 913).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation

AU - Yang, Y. Y.

AU - Huang, C. H.

AU - Hsu, Y. K.

AU - Jeng, S. J.

AU - Tai, C. C.

AU - Lee, S.

AU - Chen, H. W.

AU - Gan, Q.

AU - Chu, C. S.

AU - Ting, J. H.

AU - Lai, C. S.

AU - Lee, T. H.

PY - 2006

Y1 - 2006

N2 - "Thermal-microwave co-activation process" is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto an insulator at low temperature. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at 200 degree centigrade anneal temperature to successfully achieve a completely 8" transferred layer within 5 minutes. The result of this experiment demonstrates Thermal- microwave co-activation effective to excite hydrogen ions implanted in silicon to increase not only kinetic energy but also mobility. Finally, the surface roughness of transferred layer and the quality of bonded interface were analyzed by AFM and TEM.

AB - "Thermal-microwave co-activation process" is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto an insulator at low temperature. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at 200 degree centigrade anneal temperature to successfully achieve a completely 8" transferred layer within 5 minutes. The result of this experiment demonstrates Thermal- microwave co-activation effective to excite hydrogen ions implanted in silicon to increase not only kinetic energy but also mobility. Finally, the surface roughness of transferred layer and the quality of bonded interface were analyzed by AFM and TEM.

UR - http://www.scopus.com/inward/record.url?scp=33846082016&partnerID=8YFLogxK

U2 - 10.1557/proc-0913-d03-13

DO - 10.1557/proc-0913-d03-13

M3 - 會議論文篇章

AN - SCOPUS:33846082016

SN - 1558998691

SN - 9781558998698

T3 - Materials Research Society Symposium Proceedings

SP - 111

EP - 116

BT - Transistor Scaling-Methods, Materials and Modeling

PB - Materials Research Society

T2 - 2006 MRS Spring Meeting

Y2 - 17 April 2006 through 21 April 2006

ER -

Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation

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