"Thermal-microwave co-activation process" is a novel thin-film transferring technology to fabricating Silicon on Insulator (SOI) material. This technology can fully transfer large-area silicon thin film onto an insulator at low temperature. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at 200 degree centigrade anneal temperature to successfully achieve a completely 8" transferred layer within 5 minutes. The result of this experiment demonstrates Thermal- microwave co-activation effective to excite hydrogen ions implanted in silicon to increase not only kinetic energy but also mobility. Finally, the surface roughness of transferred layer and the quality of bonded interface were analyzed by AFM and TEM.