Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates

Q. Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, T. H. Lee

Research output: Contribution to journalArticlepeer-review

208 Scopus citations


Si, Ge, SiC, and diamond samples were implanted with H2+ at 120-160 keV with 5.0 × 1016 ions/cm2 (corresponding to l.0× 1017 H+ ions/cm2) and annealed at various temperatures to introduce hydrogen filled microcracks. An effective activation energy was determined for the formation of optically detectable surface blisters from the time required to form such blisters at various temperatures. The measured effective activation energies are close to the respective bond energies in all four materials. The time required to completely split hydrogen implanted layers from bonded silicon substrates and to transfer them onto oxidized silicon wafers is a factor of about 10 longer. Both processes, blister formation and layer splitting, show the same activation energy.

Original languageEnglish
Pages (from-to)1390-1392
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 17 Mar 1997


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